?1999 fairchild semiconductor corporation 1 www.fairchildsemi.com sgp23n60uf rev. c0 sgp23n60uf 600 v pt igbt april 2013 sgp23n60uf 600v pt igbt general description fairchild ? ?s uf series igbts pr ovide low conduction and switching losses. uf series is designed for the applications such as general inverters and pfc where high speed switching is required feature. features ? 12 a, 600 v, t c = 100c ? low saturation voltage: v ce (sat) = 2.1 v @ i c = 12 a ? typical fall time. . . . . . . . . .220ns at t j = 125c ? high input impedance applications general inverter, pfc to-220 g c e g c e g c e
?1999 fairchild semiconductor corporation 2 www.fairchildsemi.com sgp23n60uf rev. c0 sgp23n60uf 600 v pt igbt absolute maximum ratings t c = 25 ? ? 20 v i c collector current @ t c = 25 ? ? ? ? ? ? ? ? ? ? /w r ? ? /w electrical characteristics of the igbt t c = 25 ? ? ? ? ? ? ? ? ? ? ? ? , inductive load, t c = 125? - on switching loss -- 205 -- uj e off turn - off switching loss -- 320 -- uj e ts total switching loss -- 525 800 uj ce
sgp23n60uf 600 v pt igbt ?1999 fairchild semiconductor corporation 3 www.fairchildsemi.com sgp23n60uf rev. c0 048121620 0 4 8 12 16 20 common emitter t c = 25 24a 12a i c = 6a collector - emitter voltage, v ce [v] gate - emitter voltage, v ge [v] 0 5 10 15 20 0.1 1 10 100 1000 duty cycle : 50% t c = 100 power dissipation = 21w v cc = 300v load current : peak of square wave frequency [khz] load current [a] 0.5 1 10 0 10 20 30 40 50 common emitter v ge = 15v t c = 25 t c = 125 collector current, i c [a] collector - emitter voltage, v ce [v] fig 1. typical output characteristics fig 2. typical saturation voltage characteristics fig 3. saturation voltage vs. case temperature at variant current level fig 4. load current vs. frequency fig 5. saturation voltage vs. v ge fig 6. saturation voltage vs. v ge 048121620 0 4 8 12 16 20 common emitter t c = 125 24a 12a i c = 6a collector - emitter voltage, v ce [v] gate - emitter voltage, v ge [v] 0 30 60 90 120 150 0 1 2 3 4 24a 12a i c = 6a common emitter v ge = 15v collector - emitter voltage, v ce [v] case temperature, t c [] 02468 0 20 40 60 80 100 20v 12v 15v v ge = 10v common emitter t c = 25 collector current, i c [a] collector - emitter voltage, v ce [v]
?1999 fairchild semiconductor corporation 4 www.fairchildsemi.com sgp23n60uf rev. c0 sgp23n60uf 600 v pt igbt 110100200 30 100 1000 eon eoff eon eoff common emitter v cc = 300v, v ge = 15v i c = 12a t c = 25 t c = 125 switching loss [uj] gate resistance, r g [ : ] 1 10 100 200 50 100 1000 toff tf toff tf common emitter v cc = 300v, v ge = 15v i c = 12a t c = 25 t c = 125 switching time [ns] gate resistance, r g [ : ] 1 10 100 200 10 100 200 common emitter v cc = 300v, v ge = 15v i c = 12a t c = 25 t c = 125 ton tr switching time [ns] gate resistance, r g [ : ] fig 7. capacitance characteristics fig 8. turn-on characteristics vs. gate resistance fig 9. turn-off characteristics vs. gate resistance fig 10. switching loss vs. gate resistance fig 11. turn-on characteristics vs. collector current fig 12. turn-off characteristics vs. collector current 4 8 12 16 20 24 50 100 1000 toff tf toff tf common emitter v cc = 300v, v ge = 15v r g = 23 : t c = 25 t c = 125 switching time [ns] collector current, i c [a] 4 8 12 16 20 24 10 100 200 ton tr common emitter v cc = 300v, v ge = 15v r g = 23 : t c = 25 t c = 125 switching time [ns] collector current, i c [a] 11030 0 200 400 600 800 1000 1200 cres coes cies common emitter v ge = 0v, f = 1mhz t c = 25 capacitance [pf] collector - emitter voltage, v ce [v]
sgp23n60uf 600 v pt igbt ?1999 fairchild semiconductor corporation 5 www.fairchildsemi.com sgp23n60uf rev. c0 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 0.005 0.01 0.1 1 5 0.5 0.2 0.1 0.05 0.02 0.01 single pulse thermal response, zthjc [ /w] rectangular pulse duration [sec] 1 10 100 1000 0.1 1 10 100 200 safe operating area v ge = 20v, t c = 100 collector current, i c [a] collector-emitter voltage, v ce [v] fig 14. gate charge characteristics fig 15. soa characteristics fig 16. turn-off soa characteristics fig 13. switching loss vs. collector current pdm t1 t2 duty factor d = t1 / t2 peak tj = pdm u zthjc + t c fig 17. transient thermal impedance of igbt 4 8 12 16 20 24 10 100 1000 eoff eon eon eoff common emitter v cc = 300v, v ge = 15v r g = 23 : t c = 25 t c = 125 switching loss [uj] collector current, i c [a] 0 1020304050 0 3 6 9 12 15 300 v 200 v v cc = 100 v common emitter r l = 25 : t c = 25 gate - emitter voltage, v ge [ v ] gate charge, q g [ nc ] 0.3 1 10 100 1000 0.1 1 10 100 300 single nonrepetitive pulse t c = 25 curves must be derated linearly with increase in temperature 50us 100us 1 ? dc operation i c max. (continuous) i c max. (pulsed) collector current, i c [a] collector-emitter voltage, v ce [v]
?1999 fairchild semiconductor corporation 6 www.fairchildsemi.com sgp23n60uf rev. c0 sgp23n60uf 600 v pt igbt dimensions in millimeters mechanical dimensions to-220b03
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sgp23n60uf rev. c0 sgp23n60uf 600 v pt igbt
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